Processing method of indium foil and processing machine of indium foil

Abstract

A processing method of indium foil is disclosed. In this method, a placement head without carrying any indium foils is moved to a top of the laser distance sensor to use a laser distance sensor to perform a first measuring operation to obtain a reference height of the placement head without carrying any indium foils. The placement head is used to perform an indium foil suction operation. After the indium foil suction operation is completed, the placement head is moved to the top of the laser distance sensor and the laser distance sensor is used to perform a second measuring operation to obtain a detecting height of the placement head. A controller is used to determine whether an amount of indium foils picked up by the placement head during the indium foil suction operation is abnormal based on a difference between the reference height and the detecting height.

Description

Technical Field

[0001] This invention discloses a processing method and a processing machine, and more particularly relates to an indium wafer processing method and an indium wafer processing machine. Prior Technology

[0002] In the indium wafer mounting process, normally the wafer placement head picks up one indium wafer at a time and places it in the work area for indium wafer mounting. However, during actual machine operation, the wafer placement head may pick up overlapping indium wafers. Due to the lack of a height or thickness detection mechanism for indium wafers in conventional technology, the wafer placement head will still proceed with the indium wafer mounting process regardless of whether it picks up a single normal indium wafer or two or more overlapping indium wafers. If the product is processed with several overlapping indium wafers, the height of the processed position will be higher than the original design, which may not meet the original design specifications, resulting in the product having to be scrapped.

[0003] Traditionally, detecting overlapping heat sinks relied on optical sensors to record the height of the Z-axis motor on the machining center. The system determined whether the heat sinks were stacked by confirming the Z-axis motor reached a height where light could pass through. A height exceeding the expected level indicated overlapping. However, indium foil is a relatively new heat dissipation material with a very thin thickness, only 0.3 mm to 0.5 mm. Using optical sensors to record the Z-axis motor's height to detect indium foil thickness has low resolution and cannot accurately determine if overlapping is present. Summary of the Invention

[0004] Therefore, one of the objectives of this disclosure is to provide an indium sheet processing method and an indium sheet processing machine with high detection accuracy, capable of detecting extremely thin novel heat dissipation material indium sheets. Thus, using the processing method and machine disclosed herein, it is possible to correctly determine whether indium sheets are stacked, and remove indium sheets with abnormal stacking, avoiding the situation where stacked indium sheets are used to process products, causing the products to fail to meet the original design and thus requiring scrapping.

[0005] In accordance with the aforementioned objectives of this disclosure, an indium wafer processing method is proposed. In this method, a wafer loading head without any indium wafer is moved above a laser ranging sensor to perform a first measurement operation using the laser ranging sensor, thereby obtaining a reference height for the wafer loading head without any indium wafer. An indium wafer pick-up operation is then performed using the wafer loading head. After the indium wafer pick-up operation, the wafer loading head is moved above the laser ranging sensor to perform a second measurement operation using the laser ranging sensor, thereby obtaining a detection height for the wafer loading head. A controller uses the difference between the reference height and the detection height to determine whether the amount of indium wafer picked up by the wafer loading head during the indium wafer pick-up operation is abnormal.

[0006] According to one embodiment of this disclosure, the determination of whether the amount of indium absorbed by the implantation head during the indium wafer pick-up operation is abnormal includes determining that the amount of indium absorbed by the implantation head during the indium wafer pick-up operation is normal when the difference between the reference height and the detection height is less than 1.2 times the thickness of the indium wafer and greater than 0.8 times the thickness of the indium wafer.

[0007] According to one embodiment of this disclosure, the determination of whether the amount of indium absorbed by the implantation head during the indium wafer pick-up operation is abnormal includes determining that the amount of indium absorbed by the implantation head during the indium wafer pick-up operation is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium wafer.

[0008] According to one embodiment of this disclosure, the aforementioned reference height is a first distance between the wafer loading head without any indium wafer and the laser ranging sensor, and the detection height is a second distance between the wafer loading head and the laser ranging sensor after the indium wafer pick-up operation.

[0009] According to one embodiment of this disclosure, in the first measurement operation described above, a first height of the bottom of the implantation head relative to the laser range sensor is obtained using a laser range sensor. A second height of the imaging plane of the implantation head relative to the laser range sensor is obtained using the laser range sensor, wherein the imaging plane is not located at the bottom of the implantation head. A first difference between the second height and the first height is used as a reference height. In the second measurement operation described above, a third height of the bottom of the implantation head relative to the laser range sensor is obtained using the laser range sensor. A fourth height of the imaging plane of the implantation head relative to the laser range sensor is obtained using the laser range sensor. A second difference between the fourth height and the third height is used as a detection height.

[0010] According to one embodiment of this disclosure, when it is determined that the amount of indium sheet picked up by the indium sheet pick-up head is abnormal and the indium sheet pick-up head has picked up several indium sheets, the indium sheet processing method further includes using the indium sheet pick-up head to transport the indium sheets to the recycling area to recycle these indium sheets.

[0011] According to one embodiment of this disclosure, before performing the indium wafer pick-up operation using the wafer placement head, the indium wafer processing method further includes detecting the center position of the substrate in the working area using an upper detection device. When it is determined that the indium wafer pick-up amount by the wafer placement head is normal and the wafer placement head has picked up the indium wafer, the indium wafer processing method further includes using the wafer placement head to transport the indium wafer above the lower detection device, so as to use the lower detection device to detect the center position of the indium wafer, and using a controller to perform an alignment operation based on the center position of the substrate and the center position of the indium wafer.

[0012] In accordance with the aforementioned objectives of this disclosure, an indium wafer processing machine is further provided, comprising a platform, at least one feeding device, a conveying device, at least one wafer placement head, at least one laser ranging sensor, and a controller. The platform has at least one working area and at least one feeding area. The feeding device is located in the feeding area and configured to supply several indium wafers. The conveying device is located in the working area and configured to convey several substrates in one direction. The wafer placement head is movable on the platform along the X-axis, Y-axis, and Z-axis, and configured to pick up and convey indium wafers, and attach these indium wafers to the substrates. The laser ranging sensor is located on the platform and configured to measure the reference height of the wafer placement head when no indium wafers are being conveyed, and the detection height of the wafer placement head after the wafer picking operation. The controller is signal-connected to the laser ranging sensor and configured to receive the reference height and the detection height, and determine whether the amount of indium wafer picked up by the wafer placement head during the wafer picking operation is abnormal based on the difference between the reference height and the detection height.

[0013] According to one embodiment of this disclosure, the platform further includes a recycling area. When it is determined that the indium wafer pick-up volume of the wafer transfer head is abnormal and the wafer transfer head picks up several indium wafers, the wafer transfer head is further configured to transport the indium wafers to the recycling area to recycle these indium wafers.

[0014] According to one embodiment of this disclosure, the aforementioned indium wafer processing machine further includes at least one upper detection device and at least one lower detection device. The upper detection device is movably mounted on the platform and signal-connected to the controller. The upper detection device is configured to measure the center position of each substrate in the working area and transmit the center positions of these substrates to the controller. The lower detection device is mounted on the platform and signal-connected to the controller. The lower detection device is configured to measure the center position of the indium wafer picked up by the wafer loading head and transmit the center position of the indium wafer to the controller for alignment operation. Simple Explanation of the Diagram

[0015] A better understanding of the features disclosed herein can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features can be arbitrarily increased or decreased for clarity of discussion. [Figure 1] is a schematic diagram of an indium wafer processing machine according to one embodiment of the present disclosure. [Figure 2] is a block diagram illustrating an indium wafer processing machine according to one embodiment of the present disclosure. [Figure 3] is a schematic flowchart illustrating an indium wafer processing method according to the first embodiment of this disclosure. Figures 4 to 6 are schematic diagrams illustrating the apparatus used in the intermediate steps of the indium wafer processing method of the first embodiment. [Figure 7] is a schematic flowchart illustrating an indium wafer processing method according to the second embodiment of this disclosure. Figures 8 to 10 are schematic diagrams illustrating the apparatus used in the intermediate steps of the indium wafer processing method of the second embodiment. Implementation

[0016] The embodiments of this disclosure are discussed in detail below. However, it will be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific situations. The embodiments discussed and disclosed are for illustrative purposes only and are not intended to limit the scope of this disclosure. All embodiments of this disclosure disclose a variety of different features, but these features can be implemented individually or in combination as needed.

[0017] Furthermore, the terms "first," "second," etc., used in this article do not specifically refer to order or sequence; they are merely used to distinguish elements or operations described using the same technical terms.

[0018] The spatial relationship between the two components described in this disclosure applies not only to the orientation shown in the diagrams, but also to orientations not shown in the diagrams, such as inverted orientations. Furthermore, the terms "connection," "electrical connection," or similar expressions used in this disclosure to refer to the two components are not limited to a direct or electrical connection, but may also include indirect or electrical connections as needed.

[0019] Please refer to Figures 1 and 2, which are schematic diagrams of an indium wafer processing machine 100 according to one embodiment of the present disclosure. Figure 2 is a block diagram of the indium wafer processing machine 100 according to one embodiment of the present disclosure. The indium wafer processing machine 100 is suitable for indium wafer placement operations in semiconductor manufacturing processes. The indium wafer processing machine 100 mainly includes a platform 110, at least one feeding device 120, a conveying device 130, at least one wafer placement head 140, at least one laser ranging sensor 150, and a controller 160.

[0020] Platform 110 has at least one working area 112 and at least one feeding area 114. In some embodiments, as shown in FIG1, the working area 112 is elongated and may be located adjacent to the center of platform 110, and may span platform 110 parallel to direction X. The working area 112 may be located on platform 110 in different orientations, which is not limited in this disclosure. The working area 112 provides space for substrate transport and processing operations. The number of feeding areas 114 may be the same as the working area 112, and each feeding area corresponds to the working area 112. The feeding area 114 is located on platform 110 and is located on one side of the corresponding working area 112. A feeding device 120 is correspondingly located in the feeding area 114 and can supply indium wafers required for indium wafer processing.

[0021] A transport device 130 is disposed in the work area 112. In an embodiment where the work area 112 is disposed parallel to the platform 110 in direction X, the transport device 130 can transport the substrate along direction X. A wafer placement head 140 is disposed on the platform 110 and can move along directions X, Y, and Z. Directions X, Y, and Z are perpendicular to each other. Each wafer placement head 140 can correspond to one work area 112 and one feeding device 120. The wafer placement head 140 can pick up the indium wafer supplied by the corresponding feeding device 120, transport the picked-up indium wafer to the corresponding work area 112, and attach the picked-up indium wafer to the substrate carried by the transport device 130 in the corresponding work area 112.

[0022] A laser ranging sensor 150 may correspond to a feed area 114. The laser ranging sensor 150 is disposed on a platform 110. In the embodiment of FIG1, the laser ranging sensor 150 is located on one side of the work area 112 and adjacent to the corresponding feed area 114. The laser ranging sensor 150 is configured to measure the reference height of the wafer loading head 140 when it is not carrying any indium wafers, and the detection height of the wafer loading head 140 after the wafer loading head 140 has performed an indium wafer pick-up operation from the corresponding feed device 120.

[0023] Specifically, when the wafer implantation head 140 is not carrying any indium wafers, the laser ranging sensor 150 can measure the distance between the bottom 142 of the wafer implantation head 140, which has moved above it, and the imaging plane 144 of the wafer implantation head 140, which is different from the bottom 142. The reference height can be obtained from these two distances. On the other hand, after the wafer implantation head 140 performs an indium wafer picking operation, the laser ranging sensor 150 can again measure the distance between the bottom 142 of the wafer implantation head 140, which has moved above it, and the imaging plane 144 of the wafer implantation head 140, which is different from the bottom 142. The detection height can be obtained from the two distances measured again.

[0024] Referring to Figure 2, the controller 160 can be integrated into the indium wafer processing machine 100 or set up independently. For example, the controller 160 can be integrated into the computer used with the indium wafer processing machine 100, such as an industrial computer, or it can be implemented directly in the central processing unit of the computer used with the indium wafer processing machine 100; in addition, the controller 160 can also be set up independently on the platform 110, but these are not limitations. The controller 160 can be connected to the laser range sensor 150 via wired or wireless means. In this way, the controller 160 can receive the distance information measured by the laser range sensor 150. The controller 160 can use this distance information to obtain or calculate the reference height and the detection height. The controller 160 can then calculate the difference between the reference height and the detection height, and determine whether the amount of indium wafer picked up by the wafer pick-up head 140 is abnormal based on the difference between the reference height and the detection height.

[0025] In the embodiment of Figure 1, platform 110 further includes a recycling area 116. The recycling area 116 is located on one side of the work area 112, and on the same side as the feeding area 114. For example, when platform 110 has two feeding areas 114, the indium wafer processing machine 100 includes two laser ranging sensors 150 located between these two feeding areas 114, and the recycling area 116 can be located between the two laser ranging sensors 150. The recycling area 116 can be used to recycle abnormal indium wafers. When the controller 160 determines that the indium wafer pick-up amount by the wafer placement head 140 is abnormal, and the wafer placement head 140 picks up more than two indium wafers, the wafer placement head 140 can transport these indium wafers to the recycling area 116 to recycle the indium wafers, avoiding the processing of products with abnormally large quantities of indium wafers.

[0026] In some embodiments, the indium wafer processing machine 100 further includes at least one upper detection device 170 and at least one lower detection device 180. The number of upper detection devices 170 and lower detection devices 180 corresponds to the number of working areas 112. The upper detection device 170 is movably mounted on the platform 110 and can be connected to the controller 160 via wired or wireless means. The upper detection device 170 can measure the center position of each substrate in the working area 112 and transmit the center position of the substrate to the controller 160. The lower detection device 180 is mounted on the platform 110 and can be connected to the controller 160 via wired or wireless means. After the wafer placement head 140 picks up the indium wafer, it moves above the lower detection device 180. The lower detection device 180 can measure the center position of the indium wafer picked up by the wafer placement head 140 and transmit the center position of the indium wafer to the controller 160. The controller 160 can use the information of the center position of the substrate and the information of the center position of the indium sheet to perform an alignment operation so that the indium sheet can be accurately attached to the substrate.

[0027] Please refer to Figures 1 to 6 simultaneously. Figure 3 is a flowchart illustrating an indium wafer processing method according to the first embodiment of this disclosure, and Figures 4 to 6 are schematic diagrams illustrating the apparatus for performing intermediate steps of the indium wafer processing method of the first embodiment. In the indium wafer processing method, step 200 can be performed first to move the wafer-mounting head 140, which is not carrying any indium wafers, above the corresponding laser ranging sensor 150. Then, the laser ranging sensor 150 is used to perform a first measurement operation, as shown in Figure 4. In the first measurement operation, the laser ranging sensor 150 measures a first distance D1 between the bottom 142 of the wafer-mounting head 140 (which is not carrying any indium wafers) and the laser ranging sensor 150. In this embodiment, this first distance D1 is used as the reference height of the wafer-mounting head 140 (which is not carrying any indium wafers). The laser ranging sensor 150 can transmit the measured first distance D1 information to the controller 160 via signal transmission.

[0028] After obtaining the reference height of the wafer placement head 140, step 210 can be performed, whereby the wafer placement head 140 is moved above the corresponding feeding area 114, and the wafer placement head 140 is used to perform an indium wafer picking operation to pick up the indium wafer from the feeding device 120 in FIG1.

[0029] After the indium wafer pick-up operation, step 220 can be performed to move the wafer placement head 140 above the laser ranging sensor 150, and then use the laser ranging sensor 150 to perform a second measurement operation. In the second measurement operation, the laser ranging sensor 150 measures the second distance D2 between the bottom 142 of the wafer placement head 140 and the laser ranging sensor 150 after the indium wafer pick-up operation, as shown in Figure 5. At this time, the bottom 142 of the wafer placement head 140 has picked up the indium wafer, and the second distance D2 can be the distance between the indium wafer and the laser ranging sensor 150. In this embodiment, the second distance D2 is used as the detection height of the wafer placement head 140 after the indium wafer pick-up operation. The laser ranging sensor 150 can transmit the measured second distance D2 information to the controller 160 through signal transmission.

[0030] In the embodiment shown in Figure 6, the indium wafer pick-up operation resulted in wafer stacking. In this case, the laser ranging sensor 150 measures a second distance D2' between the bottom 142 of the wafer placement head 140 after the indium wafer pick-up operation and the laser ranging sensor 150 during the second measurement operation. In this case, the second distance D2' is the detection height of the wafer placement head 140 after the indium wafer pick-up operation. The laser ranging sensor 150 can also transmit the measured second distance D2' information to the controller 160 via signal transmission.

[0031] After obtaining the reference height and detection height, the controller 160 can perform step 230. In step 230, the controller 160 can first calculate the difference between the reference height and the detection height, and then determine whether the indium wafer pick-up amount of the wafer implantation head 140 is abnormal based on the difference between the reference height and the detection height. In the case shown in Figure 5, the wafer implantation head 140 picks up only one indium wafer, indicating that the indium wafer pick-up amount of the wafer implantation head 140 is normal during the indium wafer pick-up operation. In some embodiments, the second distance D2 is essentially equal to the first distance D1 minus the thickness of the indium wafer. The thickness of the indium wafer is the difference between the detection height and the reference height.

[0032] Because the indium sheets may vary slightly in thickness due to manufacturing tolerances, or the laser ranging sensor 150 may have measurement errors, in some embodiments, the controller 160 determines that the amount of indium sheet picked up by the implantation head 140 during the indium sheet pick-up operation is normal when the difference between the reference height and the detection height is less than 1.2 times and greater than 0.8 times the thickness of the indium sheet.

[0033] In the case shown in Figure 6, the implantation head 140 picks up two indium sheets, indicating that the implantation head 140 has picked up a stack of indium sheets, and the amount of indium sheets picked up by the implantation head 140 during the indium sheet picking operation is abnormal. At this time, the difference between the second distance D2' and the first distance D1 calculated by the controller 160, that is, the difference between the reference height and the detection height, is significantly greater than the thickness of a single indium sheet, so it is determined that the indium sheet picking operation of the implantation head 140 is abnormal.

[0034] Considering the manufacturing tolerances of the indium wafer and the measurement error of the laser ranging sensor 150, in some embodiments, the controller 160 determines that the amount of indium wafer picked up by the wafer loading head 140 during the indium wafer picking operation is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium wafer.

[0035] Please refer to Figures 1, 2, and 7 through 10 simultaneously. Figure 7 is a flowchart illustrating an indium wafer processing method according to the second embodiment of this disclosure, and Figures 8 through 10 are schematic diagrams illustrating the apparatus used for intermediate steps of the indium wafer processing method of the second embodiment. In performing the indium wafer processing method of the second embodiment, step 300 can be performed first, moving the wafer-mounting head 140, which is not carrying any indium wafers, above the laser ranging sensor 150. Then, the laser ranging sensor 150 is used to perform a first measurement operation, as shown in Figure 8. In the first measurement operation, the distance between the bottom 142 of the wafer-mounting head 140 and the laser ranging sensor 150 is measured using the laser ranging sensor 150 to obtain a first height H1. Simultaneously, the distance between the imaging plane 144 of the wafer-mounting head 140 and the laser ranging sensor 150 is also measured using the laser ranging sensor 150 to obtain a second height H2. In this embodiment, the first difference between the first height H1 and the second height H2 is used as a reference height. The laser ranging sensor 150 can transmit the measured information of the first height H1 and the second height H2 to the controller 160 via signal transmission.

[0036] In some embodiments, after obtaining a reference height by calculating a first difference between a first height H1 and a second height H2 using the controller 160, step 310 can be performed. In step 310, the wafer placement head 140 is moved above the feeding area 114, and the wafer placement head 140 is used to perform an indium wafer picking operation to pick up an indium wafer from the feeding device 120.

[0037] After the indium wafer pick-up operation, step 320 can be performed to move the wafer implantation head 140 above the laser ranging sensor 150, and then the laser ranging sensor 150 is used to perform a second measurement operation. As shown in FIG9, in the second measurement operation, the laser ranging sensor 150 measures the distance between the bottom 142 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser ranging sensor 150 to obtain a third height H3. Furthermore, the laser ranging sensor 150 measures the distance between the imaging plane 144 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser ranging sensor 150 to obtain a fourth height H4. In this embodiment, the second difference between the third height H3 and the fourth height H4 is used as the detection height. The laser ranging sensor 150 can transmit the measured information of the third height H3 and the fourth height H4 to the controller 160 via signal transmission.

[0038] In the embodiment shown in Figure 10, the indium wafer pick-up operation results in wafer stacking. In this case, the laser ranging sensor 150 measures the distance between the bottom 142 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser ranging sensor 150, and the distance between the imaging plane 144 of the wafer implantation head 140 after the indium wafer pick-up operation and the laser ranging sensor 150, respectively, to obtain a third height H3' and a fourth height H4'. In this embodiment, the second difference between the third height H3' and the fourth height H4' is used as the detection height. The laser ranging sensor 150 can transmit the measured information of the third height H3' and the fourth height H4' to the controller 160 via signal transmission.

[0039] In some embodiments, the controller 160 can calculate the second difference between the third height H3 and the fourth height H4, or the second difference between the third height H3' and the fourth height H4', to obtain the corresponding detection height. After the controller 160 calculates the reference height and the detection height, step 330 can be performed. In step 330, the controller 160 can first calculate the difference between the reference height and the detection height, and then use the difference between the reference height and the detection height to determine whether the amount of indium wafer picked up by the wafer placement head 140 during the indium wafer picking operation is abnormal. In the embodiment shown in FIG. 9, the wafer placement head 140 picks up only one indium wafer, indicating that the indium wafer picking operation is normal. In some embodiments, the detection height at this time is essentially equal to the reference height plus the thickness of the indium wafer.

[0040] Considering the manufacturing tolerances of the indium sheet and the measurement error of the laser ranging sensor 150, in some embodiments, the controller 160 determines that the amount of indium sheet picked up by the indium sheet pick-up head 140 is normal when the difference between the reference height and the detection height is less than 1.2 times and greater than 0.8 times the thickness of the indium sheet.

[0041] In the case shown in Figure 10, the implantation head 140 picks up two indium sheets, indicating that the implantation head 140 has picked up a stack of indium sheets, and the amount of indium sheets picked up by the implantation head 140 during the indium sheet picking operation is abnormal. At this time, the difference between the reference height and the detection height calculated by the controller 160 is significantly greater than the thickness of a single indium sheet, and the controller 160 judges that the indium sheet picking operation of the implantation head 140 is abnormal based on this difference.

[0042] In other embodiments, considering the manufacturing tolerances and measurement errors of the indium sheet, when the controller 160 calculates that the difference between the reference height and the detection height is greater than 1.5 times the thickness of the indium sheet, the controller 160 determines that the amount of indium sheet picked up by the implantation head 140 during the indium sheet pick-up operation is abnormal.

[0043] In the second embodiment, considering the elastic change caused by the spring 146 above the implantation head 140, the implantation head 140 may not return to its original height after performing the indium wafer pick-up operation. However, the relative distance between the imaging plane 144 and the bottom 142 of the implantation head 140 is fixed. Therefore, the difference between the detection height and the reference height obtained in the second embodiment is not affected by the elastic change. Thus, compared to the first embodiment, the second embodiment can more accurately determine whether abnormal wafer stacking occurs during the indium wafer pick-up operation of the implantation head 140.

[0044] In some embodiments, when the controller 160 calculates the difference between the reference height and the detection height and determines that the indium wafer pick-up operation of the wafer loading head 140 is abnormal, i.e., the wafer loading head 140 may pick up two or more indium wafers, the indium wafer processing method further utilizes the wafer loading head 140 to transport the abnormal number of indium wafers to the recycling area 116 for recycling. This prevents the abnormal number of indium wafers from being used in subsequent product processing, causing product abnormalities or even scrapped products.

[0045] In some embodiments, before the indium wafer pick-up operation by the wafer placement head 140, the indium wafer processing method may utilize the upper detection device 170 to detect the center position of the substrate to be mounted in the work area 112, and transmit the center position information of the substrate to the controller 160. In the indium wafer processing method, after the wafer placement head 140 performs the indium wafer pick-up operation, and when the controller 160 determines that the amount of indium wafer picked up by the wafer placement head 140 is normal, the wafer placement head 140 first transports the indium wafer above the lower detection device 180, so that the lower detection device 180 can detect the center position of the indium wafer. Then, the lower detection device 180 transmits the center position information of the indium wafer to the controller 160. Subsequently, the controller 160 performs an alignment operation based on the obtained center position of the substrate and the center position of the indium wafer, thereby controlling the wafer placement head 140 to change the orientation of the picked-up indium wafer, so that the center position of the indium wafer can be aligned with the center position of the substrate. In this way, the indium wafer head 140 can accurately attach the indium wafer it has picked up to the substrate in the working area 112.

[0046] As can be seen from the above embodiments, the advantage of this disclosure is that the indium sheet processing method disclosed herein can measure and determine whether the amount of indium sheet absorbed after the indium sheet absorption operation is abnormal, and then perform different subsequent actions according to the absorption situation. When it is determined that the indium sheet absorption operation is abnormal, indium sheets with abnormal quantity can be excluded, avoiding the situation where abnormal quantity of indium sheets is processed on the product, causing subsequent product abnormalities that cannot complete the original design and must be scrapped.

[0047] Although this disclosure has been shown above by way of embodiments, it is not intended to limit this disclosure. Anyone with ordinary knowledge in this art can make various modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims.

[0048] 100: Indium wafer processing machine 110: Platform 112: Work Area 114: Material Supply Area 116: Recycling Area 120: Feeding device 130: Transport device 140: Implant head 142: Bottom 144: Image plane 146: Spring 150: Laser ranging sensor 160: Controller 170: Upper detection device 180: Lower detection device 200: Steps 210: Steps 220: Steps 230: Steps 300: Steps 310: Steps 320: Steps 330: Steps D1: First Distance D2: Second distance D2': Second distance H1: First Height H2: Second Altitude H3: Third Height H3': Third Height H4: Fourth Height H4': Fourth Height X: Direction Y: direction Z: Direction

Claims

1. A method for processing indium wafers, comprising: moving a wafer-mounting head without any indium wafers to above a laser ranging sensor, and using the laser ranging sensor to perform a first measurement operation to obtain a reference height of the wafer-mounting head without any indium wafers; performing an indium wafer pick-up operation using the wafer-mounting head; after the indium wafer pick-up operation, moving the wafer-mounting head to above the laser ranging sensor to perform a second measurement operation using the laser ranging sensor to obtain a detection height of the wafer-mounting head; and using a controller to determine whether the amount of indium wafer picked up by the wafer-mounting head during the indium wafer pick-up operation is abnormal based on the difference between the reference height and the detection height.

2. The indium sheet processing method as described in claim 1, wherein determining whether the amount of indium sheet absorbed by the implantation head during the indium sheet pick-up operation is abnormal includes determining that the amount of indium sheet absorbed by the implantation head during the indium sheet pick-up operation is normal when the difference between the reference height and the detection height is less than 1.2 times the thickness of an indium sheet and greater than 0.8 times the thickness of the indium sheet.

3. The indium sheet processing method as described in claim 1, wherein determining whether the amount of indium sheet absorbed by the implantation head during the indium sheet pick-up operation is abnormal includes determining that the amount of indium sheet absorbed by the implantation head during the indium sheet pick-up operation is abnormal when the difference between the reference height and the detection height is greater than 1.5 times the thickness of an indium sheet.

4. The indium wafer processing method as described in claim 1, wherein the reference height is a first distance between the wafer loading head without any indium wafer and the laser ranging sensor, and the detection height is a second distance between the wafer loading head and the laser ranging sensor after the indium wafer pick-up operation.

5. The indium wafer processing method as claimed in claim 1, wherein performing the first measurement operation comprises: obtaining a first height of the bottom of one of the wafer implantation heads relative to one of the laser ranging sensors using the laser ranging sensor; obtaining a second height of an image-capturing plane of one of the wafer implantation heads relative to one of the laser ranging sensors using the laser ranging sensor, wherein the image-capturing plane is not located at the bottom; and using a first difference between the second height and the first height as the reference height; and performing the second measurement operation comprises: obtaining a third height of the bottom of the wafer implantation head relative to one of the laser ranging sensors using the laser ranging sensor; obtaining a fourth height of the image-capturing plane of the wafer implantation head relative to one of the laser ranging sensors using the laser ranging sensor; and using a second difference between the fourth height and the third height as the detection height.

6. The indium sheet processing method as described in claim 1, wherein when it is determined that the amount of indium sheet picked up by the implantation head during the indium sheet pick-up operation is abnormal and the implantation head picks up a plurality of indium sheets, the indium sheet processing method further includes using the implantation head to transport the indium sheets to a recycling area to recycle the indium sheets.

7. The indium wafer processing method as described in claim 1, wherein before performing the indium wafer pick-up operation using the wafer placement head, the indium wafer processing method further comprises: detecting the center position of a substrate in a working area using an upper detection device, and when it is determined that the amount of indium wafer picked up by the wafer placement head during the indium wafer pick-up operation is normal and the wafer placement head picks up an indium wafer, the indium wafer processing method further comprises using the wafer placement head to transport the indium wafer above a lower detection device, so as to detect the center position of the indium wafer using the lower detection device; and performing a alignment operation using the controller based on the center position of the substrate and the center position of the indium wafer.

8. An indium wafer processing machine, comprising: a platform having at least one working area and at least one feeding area; at least one feeding device disposed in the at least one feeding area and configured to supply a plurality of indium wafers; a conveying device disposed in the at least one working area and configured to convey a plurality of substrates in a direction; and at least one wafer attaching head movably disposed on the platform along an X-axis, a Y-axis, and a Z-axis, wherein the at least one wafer attaching head is configured to pick up and convey the indium wafers and attach the indium wafers to the substrates; At least one laser ranging sensor is disposed on the platform, wherein the at least one laser ranging sensor is configured to measure a reference height of the implantation head when no indium wafer is being transported, and a detection height of the implantation head after the implantation head performs an indium wafer pick-up operation; and a controller is signal-connected to the at least one laser ranging sensor, wherein the controller is configured to receive the reference height and the detection height, and determine whether the amount of indium wafer picked up by the implantation head during the indium wafer pick-up operation is abnormal based on the difference between the reference height and the detection height.

9. The indium wafer processing machine as described in claim 8, wherein the platform further includes a recycling area, and when it is determined that the amount of indium wafer picked up by the wafer loading head during the indium wafer picking operation is abnormal and the wafer loading head picks up a plurality of indium wafers, the wafer loading head is further configured to transport the indium wafers to a recycling area for recycling the indium wafers.

10. The indium wafer processing machine as claimed in claim 8, further comprising: at least one upper detection device movably disposed on the platform and signal-connected to the controller, wherein the upper detection device is configured to measure the center position of each of the substrates in the at least one working area and transmit the center positions of the substrates to the controller; and at least one lower detection device disposed on the platform and signal-connected to the controller, wherein the lower detection device is configured to measure the center position of an indium wafer picked up by the wafer inserter and transmit the center position of the indium wafer to the controller for alignment operation by the controller.

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