Method of forming iii-v group layer

TW202631486APending Publication Date: 2026-08-01JUSUNG ENG
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
JUSUNG ENG
Filing Date
2026-01-09
Publication Date
2026-08-01

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Abstract

Disclosed is a method of forming III-V Group layer on a substrate in a chamber comprising a step of forming a first layer on the substrate by atomic layer deposition (ALD); and a step of forming a III-V Group second layer on the first layer.
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