Method for producing crystal

Abstract

It is an object of the present invention to provide a method capable of industrially advantageous production of crystals useful for semiconductors. As a solution, the present invention provides a method for producing a crystal by reacting a raw material to cause crystal growth, wherein the raw material includes germanium dioxide powder dissolved or dispersed in water. By this production method, crystals used in, for example, semiconductor devices (such as compound semiconductor electronic devices), electronic components, electrical equipment parts, optical and electrophotographic apparatuses, and industrial members can be produced.

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