Sintered body of gallium nitride

Abstract

This invention provides at least one of a gallium nitride sintered body and a method for manufacturing the same; the aforementioned sintered body, despite containing more than 1.0% by mass of doping elements, still possesses high flexural strength and allows for the direct formation of p-type gallium nitride films. The gallium nitride sintered body of this invention is characterized by containing an alloy comprising one or more doping elements selected from the group consisting of beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn), and cadmium (Cd), wherein the content of the doping element is more than 1.0% by mass, and the oxygen content is less than 0.6 atm%.

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