Composition for forming resist underlayer film and method for manufacturing semiconductor substrate

TW202631566APending Publication Date: 2026-08-01JSR CORPORATION
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
JSR CORPORATION
Filing Date
2026-01-06
Publication Date
2026-08-01

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Abstract

This invention provides a composition for forming a resist underlayer film capable of forming a film with excellent embedding and flatness, and a method for manufacturing a semiconductor substrate. A composition for forming a resist underlayer film contains a carbonyl-containing compound and a solvent. The carbonyl-containing compound has at least one partial structure selected from the group consisting of partial structures represented by formula (A1) and partial structures represented by formula (A2). (In the formulas, Ar1 and Ar2 are aromatic rings with 3 to 20 carbon atoms; R1 is a hydroxyl group, a nitro group, a halogen atom, or a monovalent organic group with 1 to 20 carbon atoms; in formula (A1), one of Y1 or Y2 is a carbonyl group, and the other is a single bond, an oxygen atom, a sulfur atom, or a methylene group; n is 1 or 2; p is an integer from 0 to 4; * represents a bonding site with other partial structures in the carbonyl-containing compound.)
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