Composition, method of treating metal-containing layer by using the same, and method of manufacturing semiconductor device by using the same

TW202631573APending Publication Date: 2026-08-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2025-09-30
Publication Date
2026-08-01

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    Figure TWG2TA001070623_003
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Abstract

Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizing agent, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula
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