Semiconductor substrate manufacturing method, boron-containing film manufacturing method, boron-containing film forming materials and boron-containing compounds

Abstract

This invention provides a method for manufacturing a semiconductor substrate capable of forming a boron-containing film with a low dielectric constant, a method for manufacturing a boron-containing film, a boron-containing film forming material, and a boron-containing compound. A method for manufacturing a semiconductor substrate includes the step of contacting the substrate with a boron-containing compound, said boron-containing compound comprising at least one selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2). (In formulas (1) to (2), X is a monovalent group having a nitrogen-containing heterocycle with 1 to 20 carbon atoms or a monovalent group represented by formula (a) below; R1 to R3 are monovalent organic groups having 1 to 40 carbon atoms or hydrogen atoms; n is an integer from 1 to 4.) (In formula (a), R4 to R5 are monovalent organic groups having 1 to 40 carbon atoms, or R4 to R5 are combined with each other and together with the bonded nitrogen atoms to form a nitrogen-containing heterocycle with 3 to 10 ring members; R6 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.)