Composition for forming resist underlayer film and method for manufacturing semiconductor substrate

Abstract

This invention provides a composition for forming a resist underlayer film capable of forming a film with excellent embedding properties and bending resistance, and a method for manufacturing a semiconductor substrate. A composition for forming a resist underlayer film contains a sulfur-containing compound and a solvent, wherein the sulfur-containing compound is a compound represented by the following formula (1). In formula (1), Ar is an aromatic ring with 3 to 20 carbon atoms, substituted or unsubstituted; X is a sulfur atom, -S(=O)- or -S(=O)2-; n is an integer from 4 to 8; and multiple Ar and X atoms may be the same or different from each other.

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