Deposition of yttrium carbide (YC) film

Abstract

A method for forming rare earth carbide films comprises the steps of: a) exposing a substrate to a vapor of a rare earth-containing film-forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the rare earth carbide films is deposited on the substrate using a vapor deposition process, wherein the rare earth-containing film-forming composition comprises a Cp rare earth-containing precursor having the formula: Ln(R1mCp)(R2nCp)(R-amd), wherein R-amd is RNC(CH3)═NR; Cp is cyclopentadienyl; Ln is selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu; R1, R2 and R each are independently selected from a hydrogen atom, a C1 to C5 linear or branched alkyl-group, a C3 to C5 cyclic alkyl- group; m and n are integers. The precursor may be Y(EtCp)2(iPr-amd).

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