Resistor composition, resistor pattern formation method and copolymer

TW202631704APending Publication Date: 2026-08-01TOKYO OHKA KOGYO CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TOKYO OHKA KOGYO CO LTD
Filing Date
2025-09-26
Publication Date
2026-08-01
Patent Text Reader

Abstract

This invention relates to an inhibitor composition that generates acid through exposure and alters the solubility of a developer solution through the action of the acid. It contains a resin component (A1) that alters the solubility of the developer solution through the action of the acid. This resin component (A1) contains an inhibitor composition of a copolymer represented by the general formula (A1-0) (where Rc is an ns-valent linkage, ns is an integer of 3 or more, L is a divalent linkage; P is a copolymer portion having: a constituent unit containing an acid-decomposing group whose polarity increases through the action of the acid, a constituent unit that becomes a proton source, and a constituent unit that generates acid through exposure).
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