Composition for forming photoresist lower layer film

TW202631737APending Publication Date: 2026-08-01NISSAN CHEM CORP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
NISSAN CHEM CORP
Filing Date
2025-11-21
Publication Date
2026-08-01
Patent Text Reader

Abstract

This invention provides a composition for forming a photoresist underlayer film that improves sensitivity while forming a good photoresist pattern. The composition for forming a photoresist underlayer film of this invention comprises: a polymer (A) and a solvent; the polymer (A) is a monovalent organic group (B1) bonded to a polymer (C) via an aminocarbamate bond; the aminocarbamate bond is obtained by reacting a hydroxyl group in the polymer (C) having a side chain containing one or more polymerizable multiple bonds selected from the group consisting of carbon-carbon double bonds, carbon-carbon triple bonds, carbon-nitrogen double bonds, and carbon-nitrogen triple bonds, and having a hydroxyl group, with an isocyanate group in the compound (B) having an isocyanate group and the aforementioned monovalent organic group (B1).
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