Resistor materials and pattern formation methods

TW202631745APending Publication Date: 2026-08-01TOKYO OHKA KOGYO CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TOKYO OHKA KOGYO CO LTD
Filing Date
2025-09-23
Publication Date
2026-08-01
Patent Text Reader

Abstract

The purpose of this invention is to provide a novel inhibitor material and a method for forming a pattern. The inhibitor material is an inhibitor material containing (A) a polymer and (B) a metal compound. The feature is that the aforementioned component (A) contains a structural unit having fluorine atoms. The aforementioned structural unit having fluorine atoms has a monovalent or divalent aromatic hydrocarbon cyclic group. The aromatic hydrocarbon cyclic group is a group in which at least two or more hydrogen atoms on the aromatic hydrocarbon cyclic group are replaced by fluorine atoms.
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