Main chain scissionable block copolymers, photoresist compositions including the same, and pattern formation methods

The use of a block copolymer with an acid-labile group and distinct copolymer arms in a photoresist composition addresses the challenges of high-resolution patterning by reducing LWR and improving process window, thus enhancing semiconductor device integration and throughput.

TW202631762APending Publication Date: 2026-08-01DuPont Electronic Materials International LLC
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Patent Information

Application Number
TW114143298
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-13
Filing Date
2025-11-06
Publication Date
2026-08-01

AI Technical Summary

Technical Problem

Current photoresist compositions face challenges in achieving high-resolution patterning at critical dimensions smaller than 60 nm, particularly in terms of linewidth roughness (LWR) and process window, which affect the integration density and throughput of semiconductor devices.

Method used

A block copolymer with a central block containing an acid-labile group and covalently attached copolymer arms, each comprising different repeating units, is used in a photoresist composition, along with a solvent, to form a resist relief image through exposure and development.

Benefits of technology

The block copolymer composition improves resolution and reduces LWR, enhancing the uniformity and structural consistency of lithographic patterns, thereby improving the performance of photolithography processes.

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Abstract

A block copolymer, comprising a center block comprising an acid-labile group in a backbone of the block copolymer; and at least two copolymer arms covalently attached to the center block, wherein each copolymer arm comprises a first repeating unit, and a second repeating unit that is different from the first repeating unit.
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