Compositions for forming a photoresist underlayer, a photoresist underlayer, a method for forming a photoresist pattern, and a method for manufacturing a semiconductor device.

Abstract

The composition for forming the photoresist lower layer film of the present invention contains a resin (G) having a composite unit structure and a solvent; the aforementioned composite unit structure has: a unit structure (A) having a benzene ring with one hydroxyl group and a unit structure (B) having one or more carbon atoms; the aforementioned unit structure (A) has a biphenyl skeleton having the aforementioned benzene ring and other benzene rings bonded by single bonds, or a biphenyl analog structure having the aforementioned benzene ring and other benzene rings bonded by divalent groups; the aforementioned resin (G) is a resin obtained by reacting a reaction in which covalent bonds are formed between the carbon atoms of the benzene ring constituting the aforementioned unit structure (A) and the carbon atoms in the aforementioned unit structure (B).

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