Reverse patterning process

Abstract

The present invention provides a patterning process for forming a pattern, including the steps of: (i) forming a resist pattern on a support using a resist film obtained from a resist composition containing a hypervalent iodine compound, a carboxy group-containing compound, and a solvent; (ii) applying a material for forming a reversed pattern onto the support having the resist pattern formed to form a coating film for pattern-reversing; and (iii) removing the resist pattern by etching to form a reversed pattern. This can provide a patterning process that can be applied to photolithography using a high-energy beam, particularly to electron beam (EB) lithography and an extreme ultraviolet ray (EUV), and in which a resist pattern is formed by using a non-chemically amplified resist composition having excellent sensitivity and an excellent resolution limit and the pattern is reversed by using a material for forming a reversed pattern that has high etching resistance.