Resist composition and patterning process

Abstract

and a solvent. This can provide a resist composition that exhibits excellent sensitivity, stability, and ease of handling for photolithography using a high-energy beam, particularly EB lithography and EUV lithography, as well as a patterning process that uses the resist composition.

Claims

1. An inhibitor composition, characterized by containing: a compound represented by the following general formula (1), and a solvent; wherein R1 is a halogen atom, or may contain a hydrocarbon group with 1 to 10 carbon atoms of heteroatoms.

2. The inhibitor composition as claimed in claim 1, wherein, The inhibitor composition comprises a metal compound containing one or more metals selected from cobalt, nickel, copper, zinc, silver, indium, tin, antimony, tellurium, and platinum.

3. A pattern forming method, characterized by comprising the following steps: forming a resist film on a substrate using a resist composition as claimed in claim 1 or 2, exposing the resist film to high-energy radiation, and developing the exposed resist film to form a resist pattern.

4. The pattern forming method as described in claim 3, wherein, The high-energy ray is either EB or EUV.

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