Polishingcomposition,polishingmethod,andmethodforproducingsemiconductorsubstrate

TW202631914APending Publication Date: 2026-08-01FUJIMI INCORPORATED
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
FUJIMI INCORPORATED
Filing Date
2025-09-10
Publication Date
2026-08-01
Patent Text Reader

Abstract

Provided is a polishing composition that can polish a carbon film at a high polishing removal rate. A polishing composition containing abrasive grains and a nonionic surfactant, wherein the polishing composition is used for polishing an object to be polished containing a carbon film.
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