Polishingcomposition,polishingmethod,andmethodforproducingsemiconductorsubstrate
The grinding composition with abrasive particles and nonionic surfactants significantly improves the grinding rate of carbon films on semiconductor substrates, overcoming previous rate limitations.
TW202631914APending Publication Date: 2026-08-01FUJIMI INCORPORATED
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Patent Information
- Application Number
- TW114134661
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-09-27
- Filing Date
- 2025-09-10
- Publication Date
- 2026-08-01
AI Technical Summary
Technical Problem
Existing CMP technologies struggle to achieve high grinding rates for carbon films on semiconductor substrates.
Method used
A grinding composition comprising abrasive particles, preferably anionic modified colloidal silicon dioxide, and a nonionic surfactant, such as polyoxyethylene glycol compounds, enhances the grinding rate of carbon films by increasing contact frequency and improving surface interaction.
Benefits of technology
The composition achieves a high grinding rate of carbon films, exceeding 80 Å/min, effectively addressing the limitations of previous technologies.
✦ Generated by Eureka AI based on patent content.
Abstract
Provided is a polishing composition that can polish a carbon film at a high polishing removal rate. A polishing composition containing abrasive grains and a nonionic surfactant, wherein the polishing composition is used for polishing an object to be polished containing a carbon film.
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