Chemical mechanical polishing solution

Abstract

This application is based on a polishing solution of cerium oxide. The general formula I type compounds are used as dopants for polysilicon, and the polishing removal of polysilicon is achieved under acidic conditions. At the same time, the polishing rate ratio of silicon oxide and polysilicon can be adjusted. The specific structure of the general formula I compound is as follows: Wherein X1 to X3 are each independently selected from C or N, and at least one of X1 to X3 is N; R1 is selected from H or amino; R2 is selected from H, methyl, amino, ,,,,,,or .