Chemical mechanical planarization for advanced node high bandwidth memory device

Abstract

Present Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems are used in multi-types of films polishing in advanced node high bandwidth memory (HBM) device fabrication process. The CMP polishing compositions comprise abrasives; amino acid or its salts or derivatives; peroxy type of oxidizing agents; optionally an azole compound; a surfactant; benzenesulfonic acid, its derivatives, its salts, or combinations thereof; and polyol to provide high and tunable remove rates in polishing multi-types of films, such as silicon oxide film, silicon nitride film, Cu film, and other relevant films from the patterned wafer surfaces in HBM devices.