Chemical mechanical polishing slurry
TW202631919APending Publication Date: 2026-08-01ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
- Filing Date
- 2025-12-18
- Publication Date
- 2026-08-01
Abstract
The invention discloses a chemical mechanical polishing slurry for Barrier CMP. The slurry comprises abrasive particles, azole compounds, organic carboxylic acids, hydrogen peroxide, and water, and further comprising benzenesulfonic acid and / or benzenesulfonate surfactants. This polishing slurry provides the capability to control removal rates of low-k (BD) and ultra-low (ULK) film, achieving the desired removal rates and removal rate selectivity of various films, and thereby, meeting Barrier CMP process requirements.
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