Chemical mechanical polishing slurry
TW202631920APending Publication Date: 2026-08-01ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
- Filing Date
- 2025-12-19
- Publication Date
- 2026-08-01
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Figure TWG2TA001071532_001 
Figure TWG2TA001071532_002
Abstract
The invention provides a chemical mechanical polishing slurry comprising abrasive particles, complexing agent, oxidizing agent, water, and at least one corrosion inhibitor. The polishing slurry provides high removal rates of titanium and silicon dioxide, high removal rate selectivity of silicon dioxide to cobalt, as well as strong cobalt corrosion control and dishing reduction capabilities.
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