Method for processing semiconductor substrate, method for manufacturing semiconductor device, and processing solution for semiconductor device

TW202631974APending Publication Date: 2026-08-01TOKYO OHKA KOGYO CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TOKYO OHKA KOGYO CO LTD
Filing Date
2025-10-08
Publication Date
2026-08-01

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    Figure TWG2TA001070776_003
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Abstract

The present invention provides a method for processing a semiconductor substrate having a layer comprising a metal nitride by processing it with a semiconductor device processing solution; the semiconductor device processing solution contains NH3, a preservative and water, the preservative being selected from at least one of the group consisting of 5-methyl-1H-benzotriazole, imidazole and 5-amino-1H-tetrazole, and the mass ratio of NH3 content to preservative content (NH3 / preservative) being 5 to 60, a method for manufacturing a semiconductor device, and a semiconductor device processing solution that can be used in the above.
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