Sputtering target for magnetic recording media

TW202632031APending Publication Date: 2026-08-01TANAKA KIKINZOKU KOGYO KK +1
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-12-08
Publication Date
2026-08-01

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Abstract

A sputtering target is provided for forming a buffer layer that suppresses the in-plane orientation of magnetic particles in magnetic thin films of FePt alloys and the like in magnetic recording media, while also making the magnetic particles fine. When forming a magnetic thin film on an underlying film, a buffer layer is formed between the underlying film and the magnetic thin film. The target includes a magnetic phase composed of an FePt-based alloy containing Fe, Pt, and element M, and a non-magnetic phase composed of at least one of C, carbides, and nitrides. The element M in the FePt-based alloy constituting the magnetic phase is at least one of Cu, Si, Ti, Cr, B, V, Nb, Ta, Ru, Mn, Zn, Mo, W, Au, Ag, and Ge. Such a magnetic phase is preferably composed of an FePt-based alloy containing
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