Method for forming carbon film on substrate

Abstract

This invention provides a method for forming a carbon film on a substrate, comprising: performing an ion implantation process on a substrate to form an ion-implanted region on the substrate; heating the substrate and performing a plasma pre-cleaning process on the substrate; forming a carbon film on at least one surface of the substrate; and then annealing the substrate at a high temperature. After heating and plasma pre-treatment, moisture and dangling bonds on the substrate can be removed, which is conducive to forming a dense and smooth carbon film on the substrate to improve the protective effect of the carbon film on the substrate.

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