Superconformal molybdenum via fill by use of deposition gradient control

Abstract

The present disclosure provides metal gap fill deposition methods on a semiconductor substrate. The methods include forming a liner layer on a surface of a feature by providing a first dosage and a second dosage of a first metal-containing precursor to a processing chamber. The feature includes a feature formed in a surface of the semiconductor substrate. The feature includes an opening that is defined by a capping layer and side walls. The side walls include a dielectric material. The liner layer is formed over the side walls and the capping layer. A metal gap fill material is deposited over the liner layer to fill the feature formed in the surface of the semiconductor substrate by providing a second metal-containing precursor and a hydrogen-containing precursor to the processing chamber.

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