Substrate processing methods, semiconductor device manufacturing methods, substrate processing systems and processes

TW202632040APending Publication Date: 2026-08-01KOKUSAI DENKI KK
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-09-11
Publication Date
2026-08-01

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Patent Text Reader

Abstract

The subject of this invention is to provide a technique for selectively forming films on desired surfaces with high precision. The invention includes: (a) (a1) a step of exciting an oxidant and a reducing agent into a plasma state and supplying them to a substrate having a first surface and a second surface; (a2) a step of exciting a reducing agent into a plasma state and supplying it to the substrate; and (b) a step of heat-treating the substrate following (a).
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