Substrate processing method and substrate processing apparatus

Abstract

When silicide formation is achieved on a first metal film made of a metal other than Ru deposited on a Si-containing layer exposed on the substrate surface, the silicide formation of the Si-containing layer is suppressed. The substrate processing method disclosed herein includes the following steps: forming a first metal film made of a metal other than Ru on a Si-containing layer exposed on the substrate surface; and supplying Si element to the substrate to form a metal silicate film from the Si element and the first metal film.

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