Method of manufacturing a ruthenium-containing thin film by atomic layer deposition (ALD)

TW202632044APending Publication Date: 2026-08-01DNF
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
DNF
Filing Date
2018-10-31
Publication Date
2026-08-01

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Abstract

Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
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