In situ nucleation for nanocrystalline diamond film deposition

TW202632045APending Publication Date: 2026-08-01APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2023-01-05
Publication Date
2026-08-01

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    Figure TWG2TA001071939_002
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    Figure TWG2TA001071939_003
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Abstract

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
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