A precursor composition for forming a transition metal chalcogenide film, a method for manufacturing a transition metal chalcogenide film, a transition metal chalcogenide film thus manufactured, and a semiconductor device.

TW202632047APending Publication Date: 2026-08-01TDS INNOVATION INC

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Patent Information

Authority / Receiving Office: TW · TW
Patent Type: Applications
Current Assignee / Owner
Filing Date: 2026-01-26
Publication Date: 2026-08-01

Application Information

Patent Timeline

26 Jan 2026

Application

01 Aug 2026

Publication

TW202632047A

IPC: C23C16/30; B01J21/06; B01J23/20; B01J23/24; C07F11/00; C23C16/448

Inventors: 姜奇範; 李昌洙

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Abstract

One embodiment of the present invention aims to reduce carbon byproducts in transition metal chalcogenide films, and provides a precursor composition for forming transition metal chalcogenide films, characterized in that carbon is bonded to two chalcogenide elements respectively adjacent to the carbon by double bonds; and provides a method for manufacturing a transition metal chalcogenide film using the precursor composition, and a transition metal chalcogenide film thus manufactured.

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