Wafer comprising a multilayered structure and method of producing a wafer comprising a multilayered structure
TW202632048APending Publication Date: 2026-08-01SILTRONIC AG
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- SILTRONIC AG
- Filing Date
- 2025-11-28
- Publication Date
- 2026-08-01
Abstract
cm-3, and the buffer structure comprises islands having a layered structure and consisting of alternating layers of AlxGa1-xN and AlyGa1‑yN, the islands being located in-between the AlzGa1-zN layer and the at least one superlattice structure consisting of alternating layers of AlxGa1-xN and AlyGa1‑yN.
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