Substrate processing method and substrate processing apparatus

Abstract

The contact resistance between the conductive film formed on a silicon-containing semiconductor layer within a recess in a substrate and the semiconductor layer is reduced. The substrate processing method disclosed herein includes the following steps: supplying a first processing gas containing zirconium to a substrate having a recess to form a zirconium silicate layer constituting the bottom wall of the recess, wherein the recess exposes the silicon-containing semiconductor layer on its bottom surface and forms sidewalls by an insulating film; supplying a second processing gas to the substrate to remove zirconium remaining on the sidewalls of the recess; and a film-forming step, which involves supplying a film-forming gas to the substrate after the zirconium removal step to form a conductive film within the recess.

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