Precursor delivery system and method for high speed cyclic deposition

Abstract

The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a thin film deposition system comprises a thin film deposition chamber configured to deposit a thin film by alternatingly exposing a substrate to a plurality of precursors. The thin film system additionally comprises a precursor source connected to the thin film deposition chamber by a precursor delivery line, wherein the precursor delivery line comprises a high conductance line portion between the precursor source and a final valve outside of the thin film deposition chamber. The high conductance line portion is elongated in a flow direction and has a conductance that is at least four times greater than either of immediately adjacent low conductance line portions connected at opposing ends of the high conductance line portion. The thin film system further comprises a single final valve between the high conductance line portion and the thin film deposition chamber.

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