Systems and techniques for monitoring precursors for semiconductor processing

Abstract

Systems and techniques for semiconductor processing are provided. In one implementation, a technique may include heating a precursor in an ampoule to a vapor state, flowing, while heating the precursor in the ampoule, a carrier gas into the ampoule for a first time period and thereby pressurizing the ampoule and creating a mixture of the precursor and the carrier gas, measuring, during the flowing, pressure data indicative of the pressure in the ampoule, determining, based on the pressure data, a starting pressure in the ampoule at the start of the first time period and an ending pressure in the ampoule at the end of the first time period, in which the starting pressure is lower than the ending pressure, and determining, based on the pressure data, the starting pressure, and the ending pressure, an amount of precursor in the mixture at the end of the first time period.

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