Damage-less hydrogen treatment for molybdenum oxide reduction

Abstract

In some embodiments, a method includes positioning a semiconductor structure within a processing chamber. The semiconductor structure includes a first layer disposed over a substrate surface. The semiconductor structure further includes a second layer disposed over the first layer. The second layer has a hardmask layer. The semiconductor structure further includes one or more second dielectric layers disposed over the second layer. The one or more second dielectric layers have a gap formed over a portion of the second layer. The semiconductor structure further includes a metal material disposed within the gap formed over the second layer. The metal material has a molybdenum oxide (MoOx) layer. The method further includes flowing a process gas into the processing chamber, and performing a redox operation on a portion of the semiconductor structure to reduce the MoOx to molybdenum (Mo). The redox operation includes applying a microwave energy to the process gas.

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