Semiconductor processing systems configured for performing plasma enhanced chemical vapor deposition processes and methods for depositing epitaxial layer on substrate

Abstract

Semiconductor processing systems for depositing an epitaxial layer on a substrate by a plasma enhanced chemical vapor deposition are disclosed. The semiconductor processing system includes a chamber body, a substrate support arranged within the chamber interior, and a plasma generation means configured for generating a reactive species within the chamber interior. Methods for depositing an epitaxial layer on a substrate by a plasma enhanced chemical vapor deposition process are also disclosed.