A method for forming amorphous surface to terminate defect exposure
TW202632094APending Publication Date: 2026-08-01LEAP SEMICON CORP
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- LEAP SEMICON CORP
- Filing Date
- 2025-01-17
- Publication Date
- 2026-08-01
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Abstract
The present invention discloses a method for forming an amorphous surface to terminate defect exposure, that is a method for forming an amorphous layer on the surface of silicon carbide wafer, firstly the present invention provides the silicon carbide wafer, and then cleans the silicon carbide wafer, finally forms an amorphous layer on the surface of silicon carbide wafer to terminate exposure defects and extension through the physically top-down methods.
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