Methods for evaluating the shape of semiconductor substrates and methods for fabricating estimation models.

Abstract

A novel technique for evaluating the shape of a semiconductor substrate is provided. This novel technique includes a quantization step, which quantifies the shape characteristics of the semiconductor substrate based on measurements of the intensity of light scattered from the main surface and the intensity of light scattered from the back surface. The main surface light intensity measurement is obtained by measuring the intensity of scattered light from laser light incident on the main surface of the semiconductor substrate, and the back surface light intensity measurement is obtained by measuring the intensity of scattered light from laser light incident on the back surface of the semiconductor substrate.

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