Photodetector assembly having three-dimensional inductor
A three-dimensional on-chip inductor integrated into a stacked structure addresses parasitic capacitance issues in high-speed optical detectors, achieving a substantial reduction in footprint while maintaining bandwidth performance.
TW202632229AActive Publication Date: 2026-08-01ADVANCED MICRO FOUNDRY PTE LTD
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Patent Information
- Application Number
- TW114102982
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-15
- Filing Date
- 2025-01-23
- Publication Date
- 2026-08-01
- Estimated Expiration
- 2045-01-22
AI Technical Summary
Technical Problem
High-speed optical detectors face challenges due to parasitic capacitances between components, which limit their operating speed and increase footprint when on-chip inductors are used to offset these capacitances.
Method used
A photodetector assembly with a three-dimensional on-chip inductor is integrated into a stacked structure, including a cladding layer, buried oxide layer, and semiconductor substrate, with conductive layers and vias to traverse the structure, reducing the overall footprint while maintaining or enhancing bandwidth.
Benefits of technology
The three-dimensional inductor design significantly reduces the photodetector's footprint by 76.9% to 99.3% compared to conventional planar inductors, while maintaining or improving bandwidth performance.
✦ Generated by Eureka AI based on patent content.
Abstract
A photodetector assembly comprises: a stacked structure having a cladding layer, a buried oxide layer, a semiconductor substrate, wherein the cladding layer includes a first side and a second opposed side which abuts a first side of the buried oxide layer, wherein the semiconductor substrate includes a first side which abuts a second opposed side of the buried oxide layer and further includes a second opposed side; a photodetector device embedded in the stacked structure; an inductor operably coupled to the photodetector device, wherein the inductor is arranged on the first side of the cladding structure and at least partially traverses the stacked structure; a signal electrode operably coupled to the photodetector device by using the inductor; and at least one ground electrode operably coupled to the photodetector device, wherein the signal electrode and the ground electrode are arranged on the first side of the cladding layer.
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