Raman spectroscopy system for nanostructure characterization, method and non-transitory computer readable medium

Abstract

The present disclosure provides a method for characterizing a nanostructure comprising illuminating the nanostructure with a Raman spectroscopy laser at a first power level sufficient to generate significant free charge carriers, acquiring a first Raman spectrum, illuminating the nanostructure at a second power level lower than the first power level wherein the second power level generates negligible free charge carriers, acquiring a second Raman spectrum, and determining at least one material property based on a difference between the first and second Raman spectra. The nanostructure may comprise a nanosheet field effect transistor having a superlattice of alternating Silicon and Silicon-Germanium layers with each layer having thickness less than

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