Semiconductor device and method of forming photonic integrated circuit

Abstract

A photonic integrated circuit of a semiconductor device includes a coupling waveguide that has a variable thickness between an edge coupler waveguide and a waveguide of another photonic component of the photonic integrated circuit. In particular, a thickness of the coupling waveguide at the first end of the coupling waveguide facing the edge coupler waveguide is less than a thickness of the coupling waveguide at a second end of the coupling waveguide facing the waveguide of the other photonic component. The thickness of the coupling waveguide may transition between the first end and the second end in an approximately linear manner (e.g., the coupling waveguide is tapered between the first end and the second end), in a curved manner (e.g., the coupling waveguide may have a non-linear transition between the first end and the second end), and / or in another manner.

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