Waveguide photodiode and monolithic electro-photonic integrated circuit comprising a waveguide photodiode and transimpedance amplifier

Abstract

A waveguide (WG) device includes a p-type material, an i-type material, and an n-type material (a PIN waveguide). The waveguide device includes: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate, the epitaxial layer stack being structured to form the PIN waveguide, the epitaxial layer stack including: an n-layer structure and a p-layer structure; an i-region located between the n-layer structure and the p-layer structure, the i-region including an optical material having an operating wavelength range; the n-layer structure and the p-layer structure providing a mode-shaping functionality configured to optically confine one or more modes of an optical signal configured to propagate through the i-region; wherein the mode-shaping functionality includes providing a mode extension functionality in at least one of the n-layer structure and the p-layer structure.

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