Semiconductor structure and method of forming the same

Abstract

A method of forming a semiconductor structure includes: performing a first etch on a substrate, wherein the substrate includes six cross sections arranged in sequence to define five zones along a first direction, wherein the first etch forms a first protrusion region extending from the first to fifth zones and two first connecting regions on two sides of the first protrusion region; performing a second etch on the two first connecting regions to form a strip waveguide along the sixth cross section; performing a third etch on the two first connecting regions to form a rib waveguide along the third cross section; and performing a fourth etch on the two first connecting regions to form a deep-rib waveguide along the first cross section.

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