Semiconductor device and method for manufacturing the same

TW202632350APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-03-12
Publication Date
2026-08-01

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Abstract

A semiconductor device is provided. The semiconductor device includes a first slab, and a second slab adjacent to the first slab. A first thickness of the first slab is larger than a second thickness of the second slab. The semiconductor device further includes at least one first waveguide on the first slab and a multi-mode interferometer on the first slab and the second slab coupled with the at least one first waveguide. An interface between the first slab and the second slab is below the multi-mode interferometer.
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