A method for planarizing a layer of a semiconductor wafer substrate, a planarization tool for planarizing an associated semiconducting wafer substrate and a method for planarizing a top layer of a semiconducting wafer substrate

TW202632440APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-05-05
Publication Date
2026-08-01

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    Figure TWG2TA001070101_003
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Abstract

Methods, systems, and tools for planarizing a layer of a semiconducting wafer substrate are disclosed. The topography of a field on the layer is measured, wherein the field has a surface area that is much smaller than the surface area of the substrate. A deposition pattern for obtaining a flat or planar surface is then determined. A curable material is deposited upon the field using the deposition pattern. The curable material is then imprinted with a field-sized superstrate to create a flat or planar surface. The curable material is then cured, for example by using a radiation source. The field-sized superstrate is then lifted off the cured material to obtain the planarized layer.
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