Power supply device, heat regulation method and power supply system

Abstract

A power supply device includes a power switch, configured to convert a first power signal into a second power signal according to a control signal; a first current source, configured to provide a current signal to a first node; a control circuit, configured to convert the current signal into the control signal; and a temperature-controlled current sink circuit, including at least one temperature sensing element, disposed at at least one location on the power switch, configured to generate at least one voltage signal, wherein the at least one voltage signal is respectively related to a temperature of the at least one location; an error amplifier, configured to generate a regulation signal according to the at least one voltage signal and a reference voltage; and a regulation switch, configured to sink a regulation current from the current signal at the first node according to the regulation signal.

Description

[Technical Field]

[0001] This invention refers to a power supply device, a thermal regulation method, and a power supply system, and more particularly to a power supply device, a thermal regulation method, and a power supply system that can actively monitor and regulate the power switch current. [Previous Technology]

[0002] In modern electronic systems, high-side power switches are widely used in power management. To improve system reliability and power handling capabilities, conventional techniques typically employ multiple high-side power switches connected in parallel. However, this configuration presents some challenges in practical applications. For example, due to process variations, the on-resistance of power switches may vary by ±20%. This difference can cause current to concentrate on the power switch with lower on-resistance during system startup, potentially subjecting it to excessive power load, resulting in a rapid temperature rise and ultimately triggering thermal shutdown protection, preventing the system from starting up smoothly.

[0003] To address this issue, conventional solutions typically employ current balancing or current sharing techniques. These methods attempt to distribute the current evenly among multiple power switches connected in parallel. However, when the system power demand is high, even with current balancing techniques, the temperature of some power switches may still rise rapidly to their thermal shutdown temperature (e.g., 150°C) during startup.

[0004] Another problem with the prior art is that most solutions focus primarily on the balanced distribution of current without directly controlling temperature, thus failing to effectively prevent thermal shutdown problems caused by local hot spots or transient high currents. Furthermore, traditional protection methods typically completely disconnect the power switch when the thermal shutdown temperature is approached, which may lead to a power outage. This "all or nothing" protection strategy affects the stability and reliability of the system.

[0005] Therefore, the industry is eager to find a more effective method to prevent power switches from overheating and to ensure the stable operation of the system. [Summary of the Invention]

[0006] Therefore, the present invention mainly provides a power supply device, a thermal regulation method and a power supply system, which can prevent the power switch from overheating and ensure the stable operation of the system.

[0007] This invention discloses a power supply device, including a power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal; and a temperature-controlled current extraction circuit including at least one temperature sensing element disposed at at least one position on the power switch for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one position; an error amplifier electrically connected to the at least one temperature sensing element to receive the at least one voltage signal for generating an adjustment signal according to the at least one voltage signal and a reference voltage; and an adjustment switch electrically connected to the first node and the error amplifier for extracting an adjustment current from the current signal at the first node according to the adjustment signal.

[0008] An embodiment of the present invention further discloses a thermal regulation method for a power supply device, the power supply device including a power switch and a control circuit, the thermal regulation method including providing a current signal; converting the current signal into a control signal to control the power switch to output a power signal; sensing the temperature at at least one location on the power switch to generate at least one voltage signal; generating an adjustment signal based on the difference between a reference voltage and the at least one voltage signal; and drawing an adjustment current from the current signal based on the adjustment signal.

[0009] This embodiment of the invention further discloses a power supply system, including a plurality of power supply devices, each power supply device including a power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal; and a temperature-controlled current extraction circuit including at least one temperature sensing element disposed on the power switch. A location for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one location; an error amplifier, electrically connected to the at least one temperature sensing element to receive the at least one voltage signal, for comparing the at least one voltage signal with a reference voltage to generate an adjustment signal; and an adjustment switch, electrically connected to the first node and the error amplifier, for drawing an adjustment current at the first node from the current signal according to the adjustment signal; wherein the power switching of each of the plurality of power supply devices is connected in parallel.

Implementation Method

[0011] Please refer to Figure 1, which is a functional block diagram of a power supply device 10 according to one embodiment of the present invention. The power supply device 10 includes a power switch 100, a first current source 110, a control circuit 120, and a temperature-controlled current extraction circuit 130. It can actively monitor the temperature of the power switch 100 and adjust it in real time when the temperature is too high to avoid unnecessary triggering of the thermal shutdown protection mechanism, while maintaining the stable operation of the system. Specifically, the power switch 100 can be a high-side power switch, which is used to convert a first power signal P1 into a second power signal P2 according to a control signal CTRL generated by the control circuit 120. The first current source 110 is electrically connected to the control circuit 120 and the temperature-controlled current extraction circuit 130 to form a first node N1. The first current source 110 is used to provide a current signal I1 to the first node N1. Control circuit 120 is electrically connected between power switch 100 and first node N1. It receives current signal I1 from first current source 110 and converts it into control signal CTRL to drive power switch 100. Temperature-controlled current extraction circuit 130 senses the temperature of power switch 100 and accordingly extracts or controls the magnitude of regulating current Ireg from first node N1 to adjust the magnitude of current signal I1 flowing into control circuit 120, thereby adjusting the control signal CTRL generated by control circuit 120. In this way, the second power signal P2 output by power switch 100 is temperature-regulated to prevent power switch 100 from overheating and ensure stable system operation.

[0012] In detail, as shown in Figure 1, the temperature control current extraction circuit 130 includes temperature sensing elements TS_1 to TS_n, an error amplifier 132, and an adjustment switch 134. The temperature sensing elements TS_1 to TS_n are disposed at at least one position (or detection point) on the power switch 100 to sense the temperature at the set position and generate corresponding voltage signals Vt_1 to Vt_n. The error amplifier 132 is electrically connected to the temperature sensing elements TS_1 to TS_n to receive the voltage signals Vt_1 to Vt_n, and to generate an adjustment signal Sreg based on the voltage signals Vt_1 to Vt_n and a reference voltage VREF. The adjustment switch 134 is electrically connected between the first node N1 and the error amplifier 132, and to extract an adjustment current Ireg from the current signal I1 at the first node N1 based on the adjustment signal Sreg. In other words, when the temperature of one or more detection points of the power switch 100 is too high, one or more of the voltage signals Vt_1 to Vt_n will cause the error amplifier 132 to change the output regulation signal Sreg accordingly, thereby driving the regulation switch 134 to draw more regulation current Ireg, and then adjusting the control signal CTRL, thereby reducing the conduction degree of the power switch 100 and achieving the purpose of temperature control.

[0013] It should be noted that Figure 1 shows a plurality of temperature sensing elements TS_1 to TS_n. In reality, the number n of temperature sensing elements TS_1 to TS_n can be greater than or equal to 1. That is, the temperature control current extraction circuit 130 only needs to include at least one temperature sensing element to achieve the function of detecting temperature and extracting current in a timely manner. Furthermore, although Figure 1 shows the temperature sensing elements TS_1 to TS_n and the power switch 100 separately, this is only for illustrative purposes. In reality, the temperature sensing elements TS_1 to TS_n are disposed on the power switch 100. For example, they can be disposed at one or more hot spots on the power switch 100, and are not limited to this, to monitor its temperature changes in real time.

[0014] Through the above architecture, the power supply device 10 of the present invention can actively monitor and control the temperature of the power switch 100, and adjust it in real time when the temperature is too high to avoid triggering the thermal shutdown protection mechanism, while maintaining the stable operation of the system. This temperature control method is different from the conventional all-or-nothing protection method, and can more effectively balance the needs of system performance and reliability.

[0015] It should be noted that Figure 1 illustrates the main architecture of the temperature regulation mechanism of the present invention using functional blocks. In specific implementations, those skilled in the art can use various electronic components or modules to achieve the same function or make different modifications, and are not limited thereto. For example, in one embodiment, the power supply device 10 may include a power supply circuit, for example, disposed between the first node N1 and the temperature control current extraction circuit 130, to control the connection between the first node N1 and the temperature control current extraction circuit 130 according to the power supply signal, thereby controlling the operation of the power supply device 10. In another embodiment, the power supply device 10 may include an overcurrent protection device electrically connected to the control circuit 120 and the first current source 110, to conduct the current signal I1 to the ground terminal according to an overcurrent signal, so as to avoid damage to the downstream circuit caused by overcurrent. In addition, the implementation of the power switch 100, the first current source 110, the control circuit 120 and the temperature control current extraction circuit 130 is not limited to specific components.

[0016] For example, please refer to Figure 2A, which is a schematic diagram of a power supply device 20 according to one embodiment of the present invention. The power supply device 20 is derived from the power supply device 10 and includes a power switch 200, a first current source 210, a control circuit 220, and a temperature-controlled current extraction circuit 230. For simplicity, Figure 2A uses some symbols from the power supply device 10 to indicate components or signals with the same function. Specifically, the power switch 200 is implemented with an N-channel enhancement mode metal-oxide-semiconductor field-effect transistor (MOSFET, hereinafter referred to as MOS transistor). Its equivalent circuit consists of a MOS transistor M1 and a diode D1 connected in parallel. The operating principle is well known in the art, and it can be replaced with other forms of power switches, but is not limited thereto. Power switch 200 converts an input voltage VIN into an output voltage VOUT (i.e., the first power signal P1 and the second power signal P2 in Figure 1 are voltage types) and outputs it to an equivalent output capacitor Cout. The first current source 210 consists of a current source CS2 and MOS transistors M3 to M6, forming a composite current mirror. MOS transistors M3 and M4 form the input stage current mirror, while MOS transistors M5 and M6 form the output stage current mirror, outputting a current signal I1 to the first node N1. Control circuit 220 includes a current source CS1, a MOS transistor M2, and a resistor R1. The drain of MOS transistor M2 is electrically connected to current source CS1, its gate is electrically connected to the first node N1, and its source is electrically connected to resistor R1. Therefore, MOS transistor M2 can receive the current signal I1 from the first node N1 and convert it into a control signal CTRL to drive power switch 200. The gate of the MOS transistor M2 is connected to ground through a capacitor C1 to buffer the charging of the MOS transistor M2 by the current signal I1. It can also be removed or replaced with other buffer elements.

[0017] In Figure 2A, the temperature control current extraction circuit 230 includes temperature sensing elements TS_1 to TS_3, an error amplifier 232, an adjustment switch 234, and a resistor-capacitor compensator 236. The temperature sensing elements TS_1 to TS_3 are mounted on the power switch 200, which can sense the temperature at the set location and generate corresponding voltage signals Vt_1 to Vt_3. Specifically, the temperature sensing elements TS_1 to TS_3 are each implemented using a bipolar transistor. For each of the bipolar transistors of the temperature sensing elements TS_1 to TS_3, its collector and base are electrically connected to the negative terminal (-) of the error amplifier 132 and a current source CS3, while its emitter is electrically connected to ground. In this configuration, the voltage signals Vt_1 to Vt_3 generated by the temperature sensing elements TS_1 to TS_3 are related to the temperature as shown in Figure 2B. They exhibit a relationship of approximately -2.32 mV / ℃, meaning that for every 1 degree Celsius increase in temperature, the potential of the voltage signals Vt_1 to Vt_3 decreases by 2.32 mV. In other words, the temperature sensing elements TS_1 to TS_3 are sensors with a negative temperature correlation coefficient, resulting in negative temperature correlation in the generated voltage signals Vt_1 to Vt_3.

[0018] Furthermore, the positive terminal (+) of the error amplifier 232 is connected to the reference voltage VREF. Therefore, when the temperature rises and causes the potential of one or more of the voltage signals Vt_1 to Vt_3 to drop below the reference voltage VREF, the error amplifier 232 will generate a high-level adjustment signal Sreg. After passing through the resistor-capacitor compensator 236, it can drive the adjustment switch 234 to draw current from the first node N1, thereby adjusting the current signal I1 input to the control circuit 220. The resistor-capacitor compensator 236 consists of a resistor R2 and a capacitor C2, which is electrically connected between the adjustment switch 234 and the error amplifier 232 to provide circuit stability. The adjustment switch 234 is a cascade circuit composed of MOS transistors M5 and M6, which is electrically connected between the first node N1 and the ground terminal.

[0019] In short, the temperature-controlled current extraction circuit 230 can sense the temperature of the power switch 200 and, based on this, extract or control the magnitude of the regulating current Ireg from the first node N1 to adjust the magnitude of the current signal I1 flowing into the control circuit 220, thereby adjusting the control signal CTRL generated by the control circuit 220. In this way, the output of the power switch 200 is regulated by temperature, which can prevent the power switch 200 from overheating and ensure the stable operation of the system.

[0020] Please continue to refer to Figure 3A, which is a schematic diagram of the temperature regulation of the power supply device 20. In Figure 3A, the left coordinate axis represents current, the lower coordinate axis represents input voltage VIN, and the right coordinate axis represents temperature; the solid curve 30 represents the output current Iout of the power switch 200 (i.e., the current through the equivalent output capacitance Cout), corresponding to the left and lower coordinate axes; the dashed curve 31 represents the temperature change of the power switch 200, corresponding to the right coordinate axis. Furthermore, in this example, the power supply device 20 starts regulating the temperature of the power switch 200 to 115°C. As shown in Figure 3A, when the power supply device 20 starts (before the input voltage VIN is less than 6V), the power switch 200 can stably provide the output current Iout, and the temperature rises accordingly. As the input voltage VIN increases to 6V, the temperature of the power switch 200 begins to exceed 115℃, entering the temperature regulation stage. The temperature control current extraction circuit 230 begins to extract the regulation current Ireg from the first node N1, causing the output current Iout to decrease, in order to avoid overheating of the power switch 200 and ensure the stable operation of the system.

[0021] It should be noted that Figure 3A shows an operating scenario involving the input voltage VIN, output current Iout, and the temperature of the power switch 200. In reality, as the temperature-controlled current draw circuit 230 continuously draws current, the temperature of the power switch 200 may drop below the set 115°C. At this time, the temperature-controlled current draw circuit 230 can reduce or stop drawing current, causing the output current Iout to return to its initial value. This relationship can be represented by Figure 3B, which is a graph showing the relationship between the output current Iout and the temperature of the power switch 200. As shown by curve 32 in Figure 3B, when the temperature of the power switch 200 rises above the set 115°C, the temperature-controlled current draw circuit 230 starts drawing current, causing the output current Iout to decrease; conversely, if the temperature of the power switch 200 drops from above 115°C to below 115°C, the temperature-controlled current draw circuit 230 can reduce or stop drawing current, causing the output current Iout to return to its initial value.

[0022] Furthermore, as shown in Figures 3A and 3B, when the temperature of the power switch 200 exceeds 115°C, the temperature control current extraction circuit 230 continuously extracts the regulating current Ireg from the first node N1 until the current signal I1 is completely extracted (equal to 0), at which point the output current Iout equals 0. However, in another embodiment, the designer can appropriately adjust the operation mode of the regulating switch 234, for example, by changing the dimensions of the MOS transistors M5 and M6, so that the maximum value of the regulating current Ireg is less than the current signal I1. In this case, the operation results of Figures 3A and 3B will become Figures 4A and 4B, respectively, where the solid curve 40 and the dashed curve 41 of Figure 4A correspond to the solid curve 30 and the dashed curve 31 of Figure 3A, respectively, and the curve 42 of Figure 4B corresponds to the curve 32 of Figure 3B. Referring to curves 40-42 in Figures 4A and 4B, it can be seen that when the temperature of the power switch 200 exceeds 115°C, the temperature control current extraction circuit 230 continuously extracts the regulating current Ireg from the first node N1, causing the output current Iout to continuously decrease. However, because the maximum value of the regulating current Ireg is less than the current signal I1, the output current Iout will eventually remain at a minimum value and no longer decrease. Figures 4A and 4B, compared to Figures 3A and 3B, ensure that the system still has a minimum operating current, which is a design option. This modification of the regulating switch 234 to achieve different operating modes should be a skill familiar to those skilled in the art.

[0023] Therefore, the power supply device 20 can actively monitor and control the temperature of the power switch 200, and adjust it in time when the temperature is too high to avoid triggering the thermal shutdown protection mechanism, while maintaining the stable operation of the system. This temperature control method is different from the conventional all-or-nothing protection method, and can more effectively balance the needs of system performance and reliability.

[0024] The power supply device 20 is derived from the power supply device 10. Those skilled in the art can make appropriate adjustments, but are not limited thereto. For example, in addition to appropriately selecting the number and placement of temperature sensing elements, designers can also select other types of temperature sensing elements, not limited to bipolar transistors, nor limited to specific temperature correlation coefficients. Furthermore, the setting of the reference voltage VREF is related to the timing of activating the regulating power switch 200. That is, the error amplifier 232 compares the reference voltage VREF with the voltage signals Vt_1 to Vt_3. When the temperature rises and causes the voltage signals Vt_1 to Vt_3 to fall below the reference voltage VREF, the error amplifier 232 will drive the regulating switch 234 to draw current from the first node N1. Therefore, the designer should set the value of the reference voltage VREF according to the system requirements to determine the timing of the error amplifier 232 driving the regulating switch 234 to perform regulation. That is, the setting of the reference voltage VREF is related to the critical temperature of the power switch 200. The implementation methods, components, and manufacturing processes of the power switch 200, the first current source 210, the control circuit 220, and the temperature-controlled current extraction circuit 230 can be adjusted appropriately according to the system requirements, and are not limited thereto. For example, in one embodiment, except that the temperature sensing elements TS_1 to TS_3 should be disposed on the power switch 200, the power switch 200, the error amplifier 232, and the adjustment switch 234 can be disposed on the same substrate, and are not limited thereto. In addition, in an embodiment of the power supply device 20, the first current source 210, the control circuit 220, and the temperature-controlled current extraction circuit 230 are driven by the same system voltage VCP; in another embodiment, they can also be driven by different voltages, and are not limited thereto.

[0025] In addition, other auxiliary circuits may be added to the power supply device 20. For example, please refer to Figure 5, which is a schematic diagram of a power supply device 50 according to one embodiment of the present invention. The power supply device 50 is derived from the power supply device 20, so the same components are marked with the same symbols. Compared with the power supply device 20, the power supply device 50 adds an enable circuit 500, which is electrically connected between the first node N1 and the temperature control current extraction circuit 230. It can conduct the connection from the first node N1 to the temperature control current extraction circuit 230 according to the enable signal EN. Specifically, the enable circuit 500 is composed of MOS transistors M9 and M10. It can control the connection between MOS transistors M5 and M4 and between MOS transistors M6 and M7 according to the enable signal EN, thereby controlling the operation of the power supply device 50.

[0026] On the other hand, in order to further improve the stability and reliability of the system, the power supply device 20 may also include an overcurrent protection function, thereby achieving a two-stage protection effect. That is, in addition to adjusting the output current Iout according to the temperature, the system can protect against component damage when an overcurrent occurs. For example, please refer to Figure 6A, which is a schematic diagram of a power supply device 60 according to one embodiment of the present invention. The power supply device 60 is derived from the power supply device 20, so the same components are marked with the same symbols. Compared with the power supply device 20, the power supply device 60 adds an overcurrent protection device 600, which is electrically connected to the control circuit 220 and the first current source 210, and is used to conduct the current signal I1 to the ground according to an overcurrent signal OC. Specifically, the overcurrent protection device 600 is composed of MOS transistors M11 and M12, which can draw current from the first node N1 according to the overcurrent signal OC. In this scenario, the designer can use the overcurrent protection device 600 as a second-stage temperature regulation mechanism. For example, the temperature-controlled current-drawing circuit 230 can be designed to draw the regulating current Ireg when the temperature of the power switch 200 is 115°C, and when the temperature of the power switch 200 reaches 150°C, the overcurrent protection device 600 will conduct the current signal I1 to ground. In this way, the operation result of the power supply device 60 can be transformed from Figures 4A and 4B into Figures 6B and 6C, respectively. Specifically, the solid curve 63 and dashed curve 61 in Figure 6B correspond to the solid curve 40 and dashed curve 41 in Figure 4A, respectively, and curve 62 in Figure 6C corresponds to curve 62 in Figure 4B. Referring to curves 61-63 in Figures 6B and 6C, it can be seen that when the temperature of the power switch 200 exceeds 115°C, the temperature control current extraction circuit 230 continuously extracts the regulating current Ireg from the first node N1, causing the output current Iout to continuously decrease and be maintained at a minimum value. If the temperature of the power switch 200 continues to rise to 150°C, the overcurrent protection device 600 is activated through the overcurrent signal OC to conduct the current signal I1 to the ground terminal, causing the output current Iout to drop to 0, thereby protecting the system.

[0027] It should be noted that Figures 6B and 6C illustrate the operation of the overcurrent protection device 600 based on Figures 4A and 4B. When applied to the operation scenarios shown in Figures 3A and 3B, a similar protection effect is achieved. This should be apparent to those skilled in the art upon referring to the foregoing description. Furthermore, the enable circuit 500 of the power supply device 50 and the overcurrent protection device 600 of the power supply device 60 can be appropriately integrated. For example, in one embodiment, the overcurrent protection device 600 can be connected between the enable circuit 500 and the temperature control current extraction circuit 230, i.e., the drain of the MOS transistor M11 is electrically connected to the source of the MOS transistor M10 and the drain of the MOS transistor M7. In another embodiment, the overcurrent protection device 600 can be connected between the first node N1 and the enable circuit 500, i.e., the drain of the MOS transistor M11 is electrically connected to the first node N1 and the drain of the MOS transistor M10.

[0028] The operation modes of the power supply devices 10, 20, 50, and 60 described above can be summarized as a thermal regulation process 70, as shown in Figure 7. The thermal regulation process 70 includes the following steps:

[0029] Step 700: Begin.

[0030] Step 702: Provide current signal I1.

[0031] Step 704: Convert the current signal I1 into a control signal CTRL to control the power switch 100 or 200 to output the second power signal P2 or the output voltage VOUT.

[0032] Step 706: Sensing the temperature at at least one location on the power switch 100 or 200 to generate voltage signals Vt_1 to Vt_n.

[0033] Step 708: Generate adjustment signal Sreg based on the difference between reference voltage VREF and voltage signals Vt_1~Vt_n.

[0034] Step 710: Based on the adjustment signal Sreg, draw the adjustment current Ireg from the current signal I1.

[0035] Step 712: End.

[0036] For detailed operation of the heat conditioning process 70, please refer to the foregoing description, which will not be repeated here.

[0037] It is worth noting that the foregoing embodiments illustrate that power supply devices 10, 20, 50, and 60 can actively monitor and control the temperature of power switches 100 or 200 through temperature-controlled current extraction circuits 130 or 230, and adjust them in real time when the temperature is too high. Therefore, the embodiments of the present invention achieve control and adjustability of a single power supply device. However, it is not limited thereto. Those skilled in the art can expand the system according to actual needs during implementation; for example, when multiple outputs are required, multiple power supply devices can be connected in parallel. For example, please refer to Figure 8, which is a schematic diagram of a power supply system 80 according to one embodiment of the present invention. The power supply system 80 includes power supply devices PS_1 to PS_m, which can be one of power supply devices 10, 20, 50, and 60, respectively, and are arranged in parallel. More specifically, the power switches in power supply devices PS_1 to PS_m are connected in parallel with each other. Under this architecture, the power supply system 80 can provide a higher current (to a single power supply device) to a load 800 to improve drive capability.

[0038] Since the power supply devices PS_1 to PS_m are connected in parallel, if the on-resistance of the power switch in one of the power supply devices is lower than that of the other power switches due to process variations or other factors, the current will tend to concentrate on the power switch with the lower on-resistance, potentially causing it to bear an excessive power load. In this case, since the power supply device of this embodiment can actively monitor and control the temperature of the power switch, it can adjust the temperature in real time when it is too high, reducing the current of the overheated power switch separately and avoiding triggering the thermal shutdown protection mechanism. This improves the overall system performance.

[0039] In summary, the power supply device of the present invention actively monitors and controls the temperature of the power switch by setting a temperature sensing element at a critical location of the power switch, so as to adjust the current of the power switch in a timely manner, avoid triggering the thermal shutdown protection mechanism, and maintain the stable operation of the system. Therefore, the present invention can not only effectively prevent thermal shutdown problems caused by local hot spots or transient large currents, but also ensure the reliability of the power switch while maintaining the normal operation of the system. The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made within the scope of the claims of the present invention should be included in the scope of the present invention. [Simplified Explanation of the Diagram]

[0010] Figure 1 is a functional block diagram of a power supply device according to one embodiment of the present invention. Figure 2A is a schematic diagram of a power supply device according to one embodiment of the present invention. Figure 2B is a voltage-temperature relationship diagram according to one embodiment of the present invention. Figure 3A is a schematic diagram of temperature regulation of the power supply device in Figure 2A. Figure 3B is a diagram of the output current of the power supply device in Figure 2A and the temperature of the power switch. Figure 4A is a schematic diagram of temperature regulation of the power supply device in Figure 2A. Figure 4B is a diagram of the output current of the power supply device in Figure 2A and the temperature of the power switch. Figure 5 is a schematic diagram of a power supply device according to one embodiment of the present invention. Figure 6A is a schematic diagram of a power supply device according to one embodiment of the present invention. Figure 6B is a schematic diagram of temperature regulation of the power supply device in Figure 6A. Figure 6C is a diagram of the output current of the power supply device in Figure 6A and the temperature of the power switch. Figure 7 is a schematic diagram of the thermal regulation process according to one embodiment of the present invention. Figure 8 is a schematic diagram of a power supply system according to one embodiment of the present invention.

Claims

1. A power supply device, comprising: A power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal; and a temperature-controlled current extraction circuit comprising: at least one temperature sensing element disposed at at least one position on the power switch for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one position; an error amplifier electrically connected to the at least one temperature sensing element to receive the at least one voltage signal for generating an adjustment signal based on the at least one voltage signal and a reference voltage; and an adjustment switch electrically connected to the first node and the error amplifier for extracting an adjustment current at the first node from the current signal according to the adjustment signal. Each of the at least one temperature sensing element is a bipolar transistor, and its collector and base are electrically connected to the error amplifier and a second current source, while its emitter is electrically connected to a ground terminal.

2. A power supply device, comprising: A power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal; a temperature-controlled current extraction circuit comprising: at least one temperature sensing element disposed at at least one position on the power switch for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one position; An error amplifier, electrically connected to the at least one temperature sensing element to receive the at least one voltage signal, is used to generate an adjustment signal based on the at least one voltage signal and a reference voltage; an adjustment switch, electrically connected to the first node and the error amplifier, is used to draw an adjustment current from the current signal at the first node based on the adjustment signal; and an overcurrent protection device, electrically connected to the control circuit and the first current source, is used to conduct the current signal to a ground terminal based on an overcurrent signal.

3. The power supply device as claimed in claim 1 or 2, wherein the power switch, the regulating switch, and the error amplifier are disposed on the same substrate.

4. A power supply device, comprising: A power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal, wherein the control circuit includes: a current source; a resistor; The circuit includes a metal-oxide-semiconductor field-effect transistor (MOSFET) with one drain electrically connected to the current source, one gate electrically connected to the first node, and one source electrically connected to the resistor; and a temperature-controlled current-drawing circuit comprising: at least one temperature sensing element disposed at at least one position on the power switch for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one position; an error amplifier electrically connected to the at least one temperature sensing element to receive the at least one voltage signal, for generating an adjustment signal based on the at least one voltage signal and a reference voltage; and an adjustment switch electrically connected to the first node and the error amplifier for drawing an adjustment current at the first node from the current signal based on the adjustment signal.

5. The power supply device as claimed in claim 1, 2 or 4, wherein the at least one temperature sensing element is a sensor having a negative correlation temperature coefficient.

6. A thermal regulation method for a power supply device, the power supply device including a power switch and a control circuit, the thermal regulation method comprising: providing a current signal; converting the current signal into a control signal to control the power switch to output a power signal; sensing the temperature at at least one location on the power switch using at least one temperature sensing element to generate at least one voltage signal; generating an adjustment signal based on a difference between a reference voltage and the at least one voltage signal; and drawing an adjustment current from the current signal based on the adjustment signal; wherein, Each of the at least one temperature sensing element is a bipolar transistor, and its collector and base are electrically connected to a current source and generate one of the at least one voltage signals, while its emitter is electrically connected to a ground terminal.

7. The thermal regulation method as described in claim 6, wherein the at least one voltage signal is negatively temperature-dependent.

8. A power supply system comprising a plurality of power supply devices, each power supply device including: a power switch for converting a first power signal into a second power signal according to a control signal; a first current source for providing a current signal to a first node; a control circuit electrically connected to the power switch and the first current source at the first node for converting the current signal into the control signal, the control circuit including: a current source; a resistor; and a metal-oxide-semiconductor field-effect transistor, wherein a drain is electrically connected to the current source, a gate is electrically connected to the first node, and a source is electrically connected to the resistor; and a temperature-controlled current extraction circuit including: at least one temperature sensing element disposed at at least one position on the power switch for generating at least one voltage signal, the at least one voltage signal being respectively related to the temperature of the at least one position; An error amplifier, electrically connected to the at least one temperature sensing element to receive the at least one voltage signal, is used to compare the at least one voltage signal with a reference voltage to generate an adjustment signal; and an adjustment switch, electrically connected to the first node and the error amplifier, is used to draw an adjustment current from the current signal at the first node according to the adjustment signal; wherein... The power switching of each of the plurality of power supply devices is connected in parallel.

9. The power supply system as claimed in claim 8, wherein the at least one voltage signal is negatively temperature-dependent.

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