Integrated device and method of forming the same
TW202632473APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-19
- Publication Date
- 2026-08-01
Smart Images

Figure TWG2TA001070043_001 
Figure TWG2TA001070043_002 
Figure TWG2TA001070043_003
Abstract
Some embodiments relate to an integrated device, including: a first reservoir of low compressibility fluid contained by a first elastic compartment; a second reservoir of low compressibility fluid surrounded by a second elastic compartment; a first micropump structure including: a first cavity; a first piezoelectric pump lining a first side of the first cavity; a first electrostatic valve coupling the first reservoir to the first cavity; and a second electrostatic valve coupling the second reservoir to the first cavity; and a high voltage power source coupled to the first piezoelectric pump, the first electrostatic valve, and the second electrostatic valve; and control circuitry coupled to the high voltage power source.
Need to check novelty before this filing date? Find Prior Art