Integrated device and method of forming the same

TW202632473APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-19
Publication Date
2026-08-01

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Abstract

Some embodiments relate to an integrated device, including: a first reservoir of low compressibility fluid contained by a first elastic compartment; a second reservoir of low compressibility fluid surrounded by a second elastic compartment; a first micropump structure including: a first cavity; a first piezoelectric pump lining a first side of the first cavity; a first electrostatic valve coupling the first reservoir to the first cavity; and a second electrostatic valve coupling the second reservoir to the first cavity; and a high voltage power source coupled to the first piezoelectric pump, the first electrostatic valve, and the second electrostatic valve; and control circuitry coupled to the high voltage power source.
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