Memory device and reading method thereof

Abstract

A memory device and a reading method thereof are provided. The memory device is, for example a three dimensional NAND flash memory circuit, and provides a storage media with high-performance and high-capacity. The reading method includes: during a setting period, setting a plurality of word line signals to a setting voltage, wherein each of the word line signals are commonly received by a plurality of memory sub-blocks; during a plurality of reading periods, setting a selected word line of the word line signals to a selected voltage value, and setting at least one deselected word line signal of the word line signals to a deselected voltage value; and, during each of the reading periods, selecting each of the memory sub-blocks to perform a reading operation. Wherein, the reading periods are a plurality of time period after the setting period.

Images