Semiconductor processing system and method of operating the same

Abstract

A system and method for improving the operating range of an ion source for the extraction of an ion beam with a high tilt angle are disclosed. The system includes a semiconductor processing system that includes an extraction plate having an extraction aperture that is not parallel to the surface of the workpiece. An extraction electrode is disposed outside the ion source near the extraction aperture to attract ions toward the workpiece. The voltage applied to this extraction electrode may be varied to affect the extracted ion beam. The extraction aperture may comprise an elongated slot and the extraction electrode may be separated into two pieces, one on each side of the elongated slot. In this way, the two pieces of the extraction electrode may be independently biased. This feature may also allow variation of the tilt angle.

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