Methods and devices for setting compensation voltage, charged particle beam devices

Abstract

This invention discloses a method and apparatus for setting a compensation voltage, and a charged particle beam device. The compensation voltage is used to compensate for the voltage at the edge of a wafer on a sample stage. The sample stage is provided with a wafer carrier disk for supporting the wafer and an annular electrode arranged around the wafer carrier disk. The method for setting the compensation voltage includes: acquiring edge contour data of the wafer and the annular electrode before the sample stage moves to the wafer observation position; acquiring gap data between the wafer edge and the inner edge of the annular electrode based on the edge contour data; and setting the compensation voltage applied to the annular electrode based on the gap data. This method allows the compensation voltage to be acquired during the movement of the sample stage along its trajectory, making full use of the sample stage's movement time, shortening the overall process time, and increasing the throughput of the equipment.

Images